型号 SI4876DY-T1-E3
厂商 Vishay Siliconix
描述 MOSFET N-CH 20V 14A 8-SOIC
SI4876DY-T1-E3 PDF
代理商 SI4876DY-T1-E3
产品目录绘图 DY-T1-(G)E3 Series 8-SOIC
标准包装 1
系列 TrenchFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 14A
开态Rds(最大)@ Id, Vgs @ 25° C 5 毫欧 @ 21A,4.5V
Id 时的 Vgs(th)(最大) 600mV @ 250µA
闸电荷(Qg) @ Vgs 80nC @ 4.5V
功率 - 最大 1.6W
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SOICN
包装 剪切带 (CT)
其它名称 SI4876DY-T1-E3CT
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